| PART |
Description |
Maker |
| MRF18090A MRF18090AS |
MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
1.80 - 1.88 GHz 90 W 26 V LATERAL N-CHANNEL RF POWER MOSFETS
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| TGA6316 TGA6316-EEU |
6 - 17 GHz Dual-Channel Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MRF19030SR3 MRF19030R3 |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| MRF184S MRF184 MRF184D |
MRF184R1, MRF184SR1 1 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| IT2002 |
2 to 26.5 GHz dual-channel high-power amplifier
|
Iterra
|
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| RMPA61800 |
Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC
|
RAYTHEON[Raytheon Company]
|
| MRF186D |
MRF186 1 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
| RMPA2550 |
2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD [Fairchild Semiconductor]
|
| AWB7123HM41P8 |
1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6283RM49P8 |
3.3 GHz to 3.8 GHz Mobile WiMAX Power Amplifier Module
|
ANADIGICS, Inc
|
